MURB1660CTG, MURB1660CTT4G, NRVUB1660CTT4G
http://onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC
= 150
?C) Total Device
IF(AV)
8.0
16
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC
= 150
?C)
IFM
16
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Operating Junction and Storage Temperature Range
TJ, Tstg
?65 to +175
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction?to?Case
RJC
2.0
?C/W
Maximum Thermal Resistance, Junction?to?Ambient (Note 1)
RJA
50
?C/W
Temperature for Soldering Purposes: 1/8?
from Case for 5 Seconds
TL
260
?C
1. See Chapter 7 for mounting conditions.
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF
= 8.0 Amp, T
C
= 150
?C)
(iF
= 8.0 Amp, T
C
= 25
?C)
vF
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC
= 150
?C)
(Rated dc Voltage, TC
= 25
?C)
iR
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 Amp, di/dt = 50 Amp/
s)
(IF
= 0.5 Amp, i
R
= 1.0 Amp, I
REC
= 0.25 Amp)
trr
60
50
ns
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ?
2.0%.
VR, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (
?
0.01
100
0.04
1.0
0.4
2.0
10
40
400
1.0 K
600
500
400
300
200
100
50
20
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
10
5.0
2.0
1.0
0.1
0.4 0.6 1 1.2 1.6 1.80.8 1.4
vF, INSTANTANEOUS VOLTAGE (V)
0.3
100?C
25?C
TJ
= 150
?C
100?C
TJ
= 150
?C
25?C
100
0.1
10 K
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MURF1620CT
DIODE ULT FAST 200V 8A TO-220FP
MURF1660CT
DIODE ULTRA FST 600V 8A TO220FP
MURH840CT
DIODE ULTRA FAST 400V 4A TO220AB
MURH860CT
DIODE ULTRA FAST 600V 4A TO220AB
MURHB840CT
DIODE ULTRA FAST 400V 4A D2PAK
MURHB860CTG
DIODE ULTRA FAST 600V 4A D2PAK
MURHF860CT
DIODE ULT FAST 600V 4A TO-220FP
MW6S004NT1
MOSFET RF N-CHAN 28V 4W PLD-1.5
相关代理商/技术参数
MURB2020CT
功能描述:整流器 200 Volt 20 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MURB2020CT-1
功能描述:整流器 200 Volt 20 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MURB2020CT-1P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast Rectifier, 2 x 10 A FRED Pt
MURB2020CT-1PBF
功能描述:DIODE ULTRA FAST 200V 10A TO262 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:FRED Pt™ 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2
MURB2020CT-1TRL
制造商:IRF 制造商全称:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRLPBF
制造商:IRF 制造商全称:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRR
制造商:IRF 制造商全称:International Rectifier 功能描述:Ultrafast Rectifier
MURB2020CT-1TRRPBF
制造商:IRF 制造商全称:International Rectifier 功能描述:Ultrafast Rectifier